bc807-16w bc807-25w bc807-40w features ldeally suited for automatic insertion epitaxial planar die construction complementary npn type available(bc817) marking: 807-16:5a; 807-25:5b; 807-40:5c maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.5 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = -10 a, i e =0 -50 v collector-emitter breakdown voltage v ceo i c = -10ma, i b =0 -45 v emitter-base breakdown voltage v ebo i e = -1 a, i c =0 -5 v collector cut-off current i cbo v cb = -45v, i e =0 -0.1 a collector cut-off current i ceo v ce = -40v, i b =0 -0.2 a emitter cut-off current i ebo v eb = -4 v, i c =0 -0.1 a dc current gain 807-16 807-25 807-40 h fe(1) v ce = -1v, i c = -100ma 100 160 250 250 400 600 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -50ma -0.7 v base-emitter saturation voltage v be (sat) i c = -500ma, i b = -50ma -1.2 v transition frequency f t v ce = -5v, i c = -10ma f= 100mhz 100 mhz so t -23 1. base 2. emitter 3. collector BC807W transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BC807W 2 date:2011/05 www.htsemi.com semiconductor jinyu
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